罗切斯特大学的研究者已制出全硅的发光二极管。这些管子把驱动电路集成在同一硅片上。以前，硅仅能发弱光，所以发光二极管多数是用GaAs、GaN、Znse、SiC等材料。但这些材料需要外部驱动电子装置，要求的制作技术超过已建硅半导体厂的范围。硅发光二极管的优越性是用与微电子 Researchers at the University of Rochester have made all-silicon light-emitting diodes. These tubes integrate the driver circuit on the same silicon. Previously, silicon can only be made weak, so the majority of light-emitting diodes are GaAs, GaN, Znse, SiC and other materials. However, these materials require external drive electronics and require more fabrication technology than the existing silicon semiconductor plant. The advantages of silicon light-emitting diodes are used with microelectronics