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在许多研究工作着重于多孔硅(PS)的发光机制和提高电致发光效率的同时,多孔硅接触结构问题也受到人们的关注,认为多孔硅众多的表面态导致多孔硅接触结构具有较大的内部串联电阻和较大的理想因子.在光电转换方面,金属/孔硅结构也表现出一些特别性质.本文报道采用电镀法制备的M/PS/n-Si结构的光伏效应,以及采用一种特别的设计大大提高M/PS/n-Si复合结构的光电转换效率.1 多孔硅的制备用来制备多孔硅的是单面抛光的(100)方向的n型单晶硅,电阻率约为8Ω·cm.首先在硅片未抛光面制备欧姆接触的铝膜.然后采用阳极氧化方法制备多孔硅 溶液配比为HF:H_2SO_4:酒精=4:2:4,电流密度为5mA/cm~2,阳极化时间为30min在制备过程中采用150w钨灯距硅片20cm处照射.
While many researches focus on the luminescence mechanism of porous silicon (PS) and improve the electroluminescence efficiency, the problem of porous silicon contact structure is also concerned by many surface states of porous silicon that the porous silicon contact structure has larger Internal series resistance and a larger ideal factor.Metal / hole silicon structure also showed some special properties in terms of photoelectric conversion.In this paper, the photovoltaic effect of M / PS / n-Si structure prepared by electroplating method is reported, The special design greatly improves the photoelectric conversion efficiency of the M / PS / n-Si composite structure.1 Preparation of Porous Silicon The porous silicon used is a single-side polished (100) -oriented n-type monocrystalline silicon with a resistivity of about 8Ω · cm. First, an ohmic-contact aluminum film was prepared on the unpolished surface of the silicon wafer, and then the porous silicon solution prepared by the anodization method was HF: H 2 SO 4: alcohol = 4: 2: 4 and the current density was 5 mA / cm 2 , Anodization time of 30min in the preparation process using 150w tungsten lamp 20cm away from the wafer irradiation.