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采用溶胶-凝胶法在氧化铟锡(ITO)导电玻璃上制备了纳米TiO2薄膜电极,研究了不同制备条件下TiO2薄膜的光电化学响应。利用X射线衍射仪对纳米TiO2的晶型结构进行了分析,利用原子力显微镜(AFM)对薄膜的表面形貌进行了表征。结果表明:随煅烧温度升高,锐钛矿(101)晶面的衍射峰强度增强;加入抑制剂且煅烧温度为650℃时制备的纳米TiO2为锐钛矿晶型,薄膜粒度分布均匀、尺度适宜,且表面存在一定孔隙。暂态电流测试表明:在光强为6.6mW/cm2、极化电位为+0.3V时,随着预吸附时间的延长,瞬时产生的峰值电流逐渐增大;当预吸附时间为300s时,随着煅烧温度的升高,TiO2薄膜电极对H2O分子的催化氧化光电流由24.2μA(450℃)提高到49.0μA(650℃)。
Nanocrystalline TiO2 thin film electrodes were prepared on indium tin oxide (ITO) conductive glass by sol-gel method. The photoelectrochemical reaction of TiO2 thin films was studied under different preparation conditions. The crystal structure of nano-TiO2 was analyzed by X-ray diffractometer. The surface morphology of the nano-TiO2 was characterized by atomic force microscope (AFM). The results show that the intensity of the diffraction peak of anatase (101) crystal surface increases with increasing calcination temperature. When the inhibitor is added and the calcination temperature is 650 ℃, the prepared nano-TiO2 is anatase crystal and the particle size distribution is uniform. Appropriate, and the surface of a certain porosity. The transient current test showed that the peak current instantaneously increased with the increase of the preadsorption time at the light intensity of 6.6mW / cm2 and the polarization potential of + 0.3V. When the preadsorption time was 300s, With the increase of calcination temperature, the photocatalytic photocurrent of H2O molecule was increased from 24.2μA (450 ℃) to 49.0μA (650 ℃) by TiO2 thin film electrode.