Chemical mechanical polishing (CMP) process is commonly regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in com-puter hard disk and ultra-large scale integration fabrication are reviewed here. The mechanisms underlying the interac-tion between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented. Chemical mechanical polishing (CMP) process is generally regarded as the best method for achieving global planarization in the field of surface finishing with ultra-precision. The development of investigation on material removal mechanisms for different materials used in com-puter hard disk and ultra- large scale integration fabrication are reviewed here. The mechanisms underlying the interac- tion between the abrasive particles and polished surfaces during CMP are addressed, and some ways to investigate the polishing mechanisms are presented.