本工作重点对GaN半导体探测器(图1)进行了一系列的性能测试,包括探测器的V-I曲线、C-V曲线、241Am-α能谱(图2)、探测效率等。得到探测器的能量分辨率约27%,探测效率最高可达80%,本底电流在外加-15V偏压时,小于70nA/cm2(图3)。目前,直径为8～12mm,厚度为2～4μm的GaN探测器性能比较稳定, This work focuses on a series of performance tests of the GaN semiconductor detector (Figure 1), including V-I detector, C-V curve, 241Am-α energy spectrum (Figure 2), detection efficiency and so on. The energy resolution of the detector is about 27%, and the detection efficiency is up to 80%. The background current is less than 70nA / cm2 when a bias of -15V is applied (Figure 3). Currently, the diameter of 8 ~ 12mm, thickness of 2 ~ 4μm GaN detector performance is relatively stable,