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Large-scale GaN nanowires are successfully synthesized by ammoniating Ga2O3 films on Nb layer deposited on Si(111)substrates at 850℃.X-ray diffraction(XRD),scanning electron microscopy(SEM),field-emssion transmission electron microscope(FETEM),Fourier transformed infrared spectrum(FTIR)are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires.The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter between 50nm and 100nm.Finally,discussed briefly is the formation mechanism of gallium nitride nanowires.
Large-scale GaN nanowires are synthesized synthetically by ammoniating Ga2O3 films on Nb layer deposited on Si (111) substrates at 850 ° C. X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emssion transmission electron microscope , Fourier transformed infrared spectrum (FTIR) are used to characterize the structural and morphological properties of the as-synthesized GaN nanowires. The results reveal that the nanowires are pure hexagonal GaN wurtzite structure with a length of about several microns and a diameter between 50 nm and 100nm. Finaally, discuss briefly is the formation mechanism of gallium nitride nanowires.