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设计了一种倒装焊结构,用于340 GHz的肖特基二极管探测器.探测单元是基于砷化镓(GaA s)工艺设计的.薄膜陶瓷支撑层旨在为太赫兹检测单元提供封装.通常,导电胶用作天线和输出电路之间的附接.分别对倒装焊结构和无倒装焊结构(类引线键合结构)模型对太赫兹接收天线性能的影响进行研究.为了比较的目的,使用相同的测试系统表征FC结构模型和无FC结构模型(引线键合结构).通过引线键合与倒装焊测试增益的结果比较,表明倒装焊结构可以作为大规模太赫兹检测阵列封装的低成本解决方案.
A flip-chip structure was designed for a 340 GHz Schottky diode detector.The detection unit is based on a GaAs process, and the thin film ceramic support layer is designed to provide packaging for the terahertz detection cell. In general, conductive glue is used as the attachment between the antenna and the output circuit. The effects of the flip-chip bonding structure and the flip-chip bonding structure on the performance of the THz receiving antenna are studied separately The purpose of using the same test system characterization of FC structure model and no FC structure model (wire bonding structure) by wire bonding and flip-chip test results of the gain comparison shows that the flip-chip structure can be used as a large-scale terahertz detection array Low-cost package solution.