论文部分内容阅读
国际整流器公司(IR)推出 IRLR7833及 IRLR—7821两款 HEXFET 功率 MOS-FET,它们以最新的条形沟槽(Stripe—trench)技术设计,为当今 D—pak 封装市场上通态电阻(RDS_((on))最低的30 V MOSFET。两款新器件专为同步降压变换电路而设计,适用于服务器、台式和笔记本电脑,以及网络和通信设备中的负载点(Point—of—load)变换器。IR LR7833还可用于隔离式变换器的副边同步整流。与同类直流一直流变换器 MOSFET相比,这两款 MOSFET,能将效率提高到25%或节省25%的元件数目。与上一代器件相比,IRLR7833的通态电阻降低了50%,特别适用于同步 MOSFET 应用;IRLR7821的栅电荷则降低了30%多,为理想的控制 MOSFET。两款新器件的额定栅电压均达到20 V,因此更加坚固耐用。
International Rectifier Inc. (IR) introduced two HEXFET power MOS-FETs, the IRLR7833 and IRLR-7821, which are based on the latest Stripe-trench technology and are designed for today’s on-state resistance in the D-pak package market (RDS_ ( (on) Lowest 30 V MOSFET. Both new devices are designed for synchronous step-down converter circuits and are suitable for point-of-load conversion in servers, desktops and laptops, as well as in networking and communications equipment The IR LR7833 can also be used for secondary-side synchronous rectification of isolated converters, both of which increase efficiency up to 25% or save up to 25% more components than comparable DC-DC converters. The on-state resistance of the IRLR7833 is reduced by 50% compared to previous generation devices, making it ideal for synchronous MOSFET applications and the IRLR7821 has a gate charge reduction of more than 30%, making it ideal for controlling MOSFETs. Both new devices have a nominal gate voltage of 20 V, so more durable.