论文部分内容阅读
,Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress a
【机 构】
:
School of Microelectronics,Xidian University,Xi’an 710071,China“,”Key Laboratory of Wide Band-Gap Se
【出 处】
:
中国物理B(英文版)
【发表日期】
:
2009年12期
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