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采用热氧化技术在金属铌箔片上生长了Nb2O5纳米线,利用X射线衍射光谱、扫描电子显微镜和透射电子显微镜对产物的物相、形貌和微结构进行表征,并研究了纳米线的光吸收及光催化染料降解特性。结果表明,热氧化所得Nb2O5纳米线为四方相结构,直径约为20~60 nm。当氧气流量为25 m L/min(sccm)时,纳米线生长致密、长径比高,构成网络结构。随着氧气流量的增加,纳米线的数量和致密程度逐渐下降。紫外可见吸收光谱表明,Nb2O5纳米线为直接带隙半导体,带隙宽度为3.42 e V。此外,Nb2O5纳米线在波长为365 nm的紫外光照射下对亚甲基蓝、甲基橙和罗丹明B等染料均具有光催化降解性能,效率因子分别为-0.025、-0.021和-0.008 min-1。
The Nb2O5 nanowires were grown on the metal niobium foil by thermal oxidation. The phase, morphology and microstructure of the nanowires were characterized by X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) And photocatalytic dye degradation characteristics. The results show that the thermal oxidation of Nb2O5 nanowires is a tetragonal phase with a diameter of about 20 ~ 60 nm. When the oxygen flow rate is 25 m L / min (sccm), the nanowires grow densely and the aspect ratio is high, forming a network structure. With the increase of oxygen flow rate, the number and density of nanowires decrease gradually. UV-Vis absorption spectra show that the Nb2O5 nanowires are direct bandgap semiconductors with a bandgap width of 3.42 eV. In addition, the photocatalytic degradation of Nb2O5 nanowires on methylene blue, methyl orange and rhodamine B under UV irradiation at a wavelength of 365 nm were achieved with efficiency factors of -0.025, -0.021 and -0.008 min-1, respectively.