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材料研究中心副主任兼半导体材料研究室主任徐岳生同志自一九八二年起主持进行了“中子嬗变掺杂硅的制备及其在中小功率器件和硅压阻器件中的应用”研究。截止八四年底在几个工厂推广都有良好的经济效益,使器件成品率平均提高了10—20％,将中子幅照在国内首先用于硅压阻器件生产中,改善了器件电参数,提高了产品的成品率。在一九八四年六月召开的全国传感器学术讨论会上得到好评。该项目获一九八四年河北省科技成果三等奖。除此之外,徐岳生
Vice Director of Materials Research Center and Director of Semiconductor Materials Research Division Comrade Xu Yuesheng has been chairing “Preparation of Neutron Transmutation Doping Silicon and Its Application in Small and Medium-Power Devices and Silicon Piezoresistive Devices” since 1982. Up to the end of 1984, it has good economic benefits in several factories to promote the device yield rate by an average of 10-20%. The first application of neutron radiography in the domestic production of silicon piezoresistive devices has improved the device’s electrical parameters , Improve product yield. It was well received at the National Symposium on Sensors in June 1984. The project won the Third Prize of Hebei Province Scientific and Technological Achievements in 1984. In addition, Xu Yue Sheng