一种设计沟长为2μm的先进,高性能硅栅CMOS逻辑电路系列74AC,最近由中国科学院上海冶金研究所在上海无线电十九厂协作下研制成功,并于去年10月通过技术鉴定。这种目前国际上尚处于研制阶段的新一代逻辑电路系列的问世,标志着我国逻辑电路技术已发展到新的阶段。 该电路采用了一系列先进的MOS LSI VLSI工艺:2μm的设计规则、正胶光刻、反应离子刻蚀、薄栅浅结、全离子注入以及尽可能避免可控硅效应的新型MOS结构等。新电路 An advanced, high performance Si gate CMOS logic 74 74 series with a trench length of 2 μm was successfully developed by Shanghai Institute of Metallurgy, Chinese Academy of Sciences under the cooperation of Shanghai Radio 19 Factory and passed the technical appraisal in October last year. The advent of a new generation of logic circuits that is currently still under development in the world marks that our logic circuit technology has been developed to a new stage. The circuit uses a series of advanced MOS LSI VLSI process: 2μm design rules, positive photoresist, reactive ion etching, thin gate shallow junction, all ion implantation and as far as possible to avoid the SCR effect of the new MOS structure. New circuit