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对GaN基大功率蓝光发光二极管(LED)分别施加了-200,-400,-600,-800,-1100和-1500 V的反向人体模式静电打击,每次静电打击后,测量样品电学参数和光学参数的变化,研究了静电对LED可靠性的影响,并从理论上分析了相关衰减机理。结果表明,在-200,-400,-600和-800 V的打击后,有明显的软击穿,这是因为在有源区和限制层中产生了缺陷;在-1100 V和-1500 V的打击后,漏电很大并且光通量衰减为打击前的50%,这是因为大的静电使得有源区产生熔融细丝,导致小电流时LED不发光,大电流时光通量明显下降,致使LED失效。同时还提出了一种简单有效的抗静电保护电路。
On the GaN-based high-power blue light-emitting diode (LED) were applied -200, -400, -600, -800, -1100 and -1500 V reverse human body model electrostatic blow after each electrostatic blow, measuring the electrical parameters of the sample And the change of optical parameters, the influence of static electricity on the reliability of LED was studied, and the related attenuation mechanism was analyzed theoretically. The results show that there is a clear soft breakdown after a strike at -200, -400, -600 and -800 V due to defects in the active region and the confinement layer; defects at -1100 V and -1500 V , The leakage is large and the luminous flux decays to 50% of that before the blow because the large static electricity causes the active zone to produce fused filaments, causing the LED to not emit light at low currents and the luminous flux at large currents to drop significantly, rendering the LED ineffective . Also proposed a simple and effective anti-static protection circuit.