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报道了ＭＢＥ生长的ＣｄＴｅ／Ｃｄ１－ｘＭｎｘＴｅ：Ｉｎ调制掺杂应变层多量子附材料的光荧光光谱，低温下观察到一个由多电子－单个空穴散射引起的很强的费密边奇异的发光现象，对应于费密边能量位置发光峰有一个很强的增加，使整个发光锋具有明显的非对称性．分析讨论了引起费密边奇异现象的物理机制，测量了７７Ｋ下ＣｄＴｅ／Ｃｄ１－ｘＭｎｘＴｅ：Ｉｎ样品的调制光谱，与荧光光谱进行了比较，结果进一步支持了本文的结论．还测量了费密迪奇异随温度的变化，结果表明此现象在Ⅱ—Ⅵ族半导体多量子附材料中比Ⅲ─Ｖ族材料强得多．
The fluorescence spectra of CdTe / Cd1-xMnxTe: In-doped multi-quantum-doped materials doped with strained layers have been reported, and a very strong Fibrillatorian singular luminescence due to multiple electron-single hole scattering is observed at low temperature Phenomenon, which corresponds to a strong increase of the luminescence peak at the energy position of Feibi edge, so that the entire luminescence front has obvious asymmetry. The physical mechanism of the baryophile-induced singularity was analyzed and discussed. The modulation spectra of CdTe / Cd1-xMnxTe: In at 77K were measured and compared with the fluorescence spectra. The results further support the conclusion of this paper. The variation of the Fermi density with temperature was also measured. The results show that this phenomenon is much stronger than that of III-V materials in II-VI semiconductors.