介绍了向{100}和向最近的{110}偏离2～4°的赝(111)晶片外延图形微畸变的研究结果.当参考面为(100)时,图形平行于参考边[112]安排,若晶片向(110)或(001)偏离2～4°,则垂直于参考边的线条明显变宽,当晶片向(011)或(101)偏离2～4°,图形畸变最小. The results of a study of micro-distortions of the (111) wafer epitaxial pattern deviating from {100} to the nearest {110} by 2 to 4 ° are presented. When the reference plane is (100), the pattern is arranged parallel to the reference edge [112] . If the wafer deviates from (110) or (001) by 2 ~ 4 °, the line perpendicular to the reference edge will be obviously broadened. When the wafer deviates from (011) or (101) by 2 ~ 4 °, the distortion of the pattern is the smallest.