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采用脉冲激光沉积法在MgO(100)单晶衬底上制备了Ce0.8Gd0.2O2-δ(CGO)系列薄膜,沉积温度与膜厚对CGO/MgO薄膜的微结构及离子电导率的影响分别被研究.X-ray衍射(2θ-ω线扫描,ω-摇摆曲线,(-扫描)测量显示,随着沉积温度的升高,CGO薄膜的微结构由多晶薄膜演变到外延膜.对沉积在730℃的CGO薄膜(510nm)中较大的离子电导归因于薄膜中较小的晶界密度.对高质外延的CGO薄膜(沉积730℃),随着膜厚的减小,其快速减小的激活能及增大的离子电导可解释为CGO/MgO界面平面的应变态和氧空位的无序分布所致.我们的结果表明,为获得高离子电导的CGO薄膜,最佳的沉积温度和膜厚是需要考虑的.
Ce0.8Gd0.2O2-δ (CGO) thin films were deposited on MgO (100) single crystal substrate by pulsed laser deposition. The effect of deposition temperature and film thickness on the microstructures and ionic conductivity of CGO / MgO thin films X-ray diffraction (2θ-ω line scanning, ω-rocking curve, (-scan) measurement shows that the microstructure of CGO films evolves from polycrystalline thin films to epitaxial films as the deposition temperature increases. The larger ionic conductivity in the CGO thin film (510 nm) deposited at 730 ° C is attributed to the smaller grain boundary density in the film.For high quality epitaxial CGO films deposited at 730 ° C, as the film thickness decreases, The rapidly decreasing activation energy and increased ionic conductance can be explained by the disorder of the CGO / MgO interface plane and the disordered distribution of oxygen vacancies.Our results show that to obtain high ionic conductance CGO films, the best Deposition temperature and film thickness need to be considered.