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目前利用场发射原理,制成的场发射电子枪(FEG)和液态金属离子源(LMLS),因具有束斑小,亮度高,寿命长和能量分散小等特点,将为人们所关注。现在FEG已被广泛应用于SEM,STEM,电子束曝光和俄歇电子谱仪等各种大型电子光学仪器;LMIS也在离子注入,离子束刻蚀,离子束曝光和二次离子谱仪等表面分析仪器和表面微加工等技术中获得广泛应用。在FEG和LMIS的制作和应用中,仍有许多承待解决或改进的问题。较精确的计算系统的形状系数β值就是其中之一。我们知道,不论是FEG的发射电子流还是LMIS的发射离子流都是由发射尖端的电场强度ε决定的。而ε首先由所加电压u_0决定,其次与尖端的几何形状及尖端到吸取极的距离有关。由于
At present, the field emission electron gun (FEG) and liquid metal ion source (LMLS) made by using the principle of field emission are of great concern due to their characteristics of small spot size, high brightness, long lifetime and small energy dispersion. Now FEG has been widely used in SEM, STEM, electron beam exposure and Auger electron spectrometer and other large electronic optical instruments; LMIS is also ion implantation, ion beam etching, ion beam exposure and secondary ion spectrometer and other surfaces Analytical instruments and surface micro-machining technology is widely used. In the production and application of FEG and LMIS, there are still many problems to be solved or improved. One of them is the more accurate shape coefficient β of the computing system. We know that both the emission electron current of the FEG and the emission ion current of the LMIS are determined by the electric field strength ε at the emission tip. While ε is first determined by the applied voltage u_0, secondly by the geometry of the tip and the distance from the tip to the aspirator. due to