论述了具有立方织构的金属镍基底上 ,采用射频磁控溅射的方法制备CeO2 缓冲层。以Ar/H2 混合气体作为溅射气体 ,有效地抑制了NiO的形成 ,获得纯c轴取向的CeO2 薄膜。X射线 φ扫描、ω扫描和极图的测试分析表明 ,CeO2 薄膜在平面内和垂直于膜面方向晶粒都是有序排列的 ,具有良好的立方织构。 Discussed on the cubic textured nickel substrate, a radio frequency magnetron sputtering method was used to prepare a CeO2 buffer layer. Ar / H2 mixed gas as a sputtering gas, effectively inhibiting the formation of NiO, to obtain pure c-axis oriented CeO2 film. The results of X-ray φ scan, ω scan and pole figure show that the CeO2 thin films are ordered in the plane and in the direction perpendicular to the film plane, and have good cubic texture.