论文部分内容阅读
对多种纳米材料和纳米器件的噪声进行了比较详细的研究,对纳米器件中几种常用的噪声测量方法进行了探讨。讨论了利用噪声(主要是散粒噪声)进行介观电学机制探测的方法,并提出了用于解决单电子晶体管中背景电荷噪声的有效方法,揭示了双势垒共振隧穿二极管在负微分电阻区的散粒噪声大于Poisson值的本质。
The noise of many kinds of nanomaterials and nanodevices are studied in detail. Several commonly used noise measurement methods in nanodevices are discussed. The paper discusses the method of detecting mesoscopic electric mechanism by using noise (mainly shot noise), and presents an effective method to solve the background charge noise in single electron transistor. It reveals that the double-barrier resonant tunneling diode The shot noise in the zone is greater than the nature of the Poisson value.