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通过对石墨相氮化碳(g-C_3N_4)光催化剂修饰改性,以便控制光生电子-空穴对的复合,从而使得其光催化活性得到改善。非金属掺杂g-C_3N_4光催化剂能够拓展其光谱响应范围,从而提高了g-C_3N_4的量子效率;贵金属沉积修饰g-C_3N_4光催化剂,能够优化g-C_3N_4光催化剂表面电子结构、促进光生电子与空穴对的快速分离,改善催化剂表面化学吸附状态;通过半导体偶合,使得催化系统的载流子的分离效率得到改善,进而拓展了催化材料对光谱的吸收范围,提高了复合催化剂的光活性。阐述了近年来国内外非金属掺杂、贵金属沉积、半导体复合g-C_3N_4光催化剂在污水处理、光催化分解水产氢等领域中应用的研究进展,并提出在g-C_3N_4光催化剂修饰改性研究中存在的关键问题和以后努力的方向。
The photocatalytic activity of the graphitized carbon nitride (g-C_3N_4) was modified and modified to control the recombination of photogenerated electron-hole pairs to improve its photocatalytic activity. The non-metallic doping g-C_3N_4 photocatalyst can expand its spectral response range and improve the quantum efficiency of g-C_3N_4. The deposition of g-C_3N_4 photocatalyst on noble metal can optimize the surface electronic structure of g-C_3N_4 photocatalyst and promote the photogenerated electron and The rapid separation of the hole pairs improves the chemisorption state of the catalyst surface; the carrier separation efficiency of the catalytic system is improved by the semiconductor coupling, thereby expanding the absorption range of the catalytic material to the spectrum and increasing the light activity of the composite catalyst. The research progress of non-metallic doping, precious metal deposition and semiconductor composite g-C_3N_4 photocatalysts in wastewater treatment and photocatalytic decomposition of aquatic hydrogen production in recent years has been described. The modification of g-C_3N_4 photocatalysts In the key problems and the direction of future efforts.