谱导数法在光谱研究GaInAs/InP和GaInP/AlGaInP多量子阱中的应用

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在简要讨论谱导数法物理机理的基础上 ,给出了其在光吸收谱和光反射谱方法研究张应变GaInAs InP和GaInP AlGaInP多量子阱中的成功应用实例 .比较了不同阶谱导数对测定激子跃迁能量的影响 ,论及了其与双调制谱方法、曲线拟合方法的区别 .指出了谱导数法在光谱研究GaInAs InP和GaInP AlGaInP多量子阱中的重要性和易行性 . Based on a brief discussion of the physical mechanism of spectral derivative method, an example of its successful application in tensile strain GaInAs InP and GaInP AlGaInP multiple quantum wells based on light absorption and light reflectance methods is given. The influence of sub-transition energies, the difference between the method and the double modulation method and the curve fitting method are discussed, and the importance and feasibility of the spectral derivative method in the spectroscopic study of GaInAs InP and GaInP AlGaInP multiple quantum wells are pointed out.
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