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采用化学修饰法制备对氯苯基异氰酸酯包覆还原石墨烯(rGO-pCi),研究了rGO-pCi其在聚偏氟乙烯(PVDF)基体中的分散性以及其含量对rGO-pCi/PVDF复合材料介电性能的影响。高分辨率透射电镜(TEM)和场发射扫描电镜(SEM)分析结果表明,修饰后的石墨烯褶皱结构消失,其在聚合物基体中均匀分散,并与聚合物具有良好的相容性。介电性能测试结果表明,当rGO-pCi体积含量为0.35%时,复合薄膜的介电常数比纯PVDF提高近一个数量级,介电损耗仍然保持在较低水平,同时rGO-pCi的添加不影响薄膜良好的柔韧性。
(RGO-pCi) was prepared by chemical modification method. The dispersibility of rGO-pCi in polyvinylidene fluoride (PVDF) matrix and its content of rGO-pCi / PVDF Effect of material dielectric properties. High-resolution transmission electron microscopy (TEM) and field emission scanning electron microscopy (SEM) analysis showed that the modified graphene wrinkle structure disappeared, which was uniformly dispersed in the polymer matrix, and has good compatibility with the polymer. Dielectric properties test results show that when the volume fraction of rGO-pCi is 0.35%, the dielectric constant of the composite thin film increases by nearly an order of magnitude compared with the pure PVDF and the dielectric loss remains low, while the addition of rGO-pCi does not affect Film good flexibility.