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提高平面型晶体管击穿电压的方法主要有场极板、电场限制环、耗尽区腐蚀和离子注入等.几年来,我们在如何实现平面结构晶体管的高耐压性能方面做了些工作,认为,不管是NPN型还是PNP型晶体管有效易行的方法均是场极板加等位环的组合结构.对两种结构分别做了加场极板和不加场极板的对比试验,结果表明,场极板结构对提高器件的击穿电压是非常有效的,而分压环结构则不易控制,效果也不明显.本文将以目前彩色电视机使用较多、难度较大的硅PNP高压功率品体管(2 SA940)为例,讨论带场极板和等位环组合结构晶体管的设计和制造,并通过计算机模拟比较理论和试制结果.
The main methods to improve the breakdown voltage of planar transistors are field plates, field limiting loops, depletion region etching and ion implantation, etc. For several years, we have done some work on how to realize the high breakdown voltage of planar structure transistors, , Both NPN-type and PNP-type transistors are effective combination of field plate and equipotential ring.The comparison test between the two structures with and without the field plate shows that , Field plate structure to improve the breakdown voltage of the device is very effective, and the partial pressure ring structure is not easy to control, the effect is not obvious.This paper will use more color TV, more difficult silicon PNP high-voltage power The transistor (SA940) is taken as an example to discuss the design and manufacture of transistors with field plates and equipotential rings. The theoretical and experimental results are compared by computer simulation.