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日立制作所日前宣布,开发出了有关中高耐压(35～300 V左右)晶体管的两项技术,其中一项是在一枚芯片上集成源漏极耐压各不相同的多个晶体管的技术,另一项是可将栅源极耐压提高至300 V的技术。日立表示,采用这2两项技术的产品将在2011年内开始供货。
Hitachi recently announced that it has developed two technologies for medium- and high-withstand voltage (35-300 V) transistors. One of them is a technology that integrates multiple transistors with different source and drain withstand voltages on a single chip , And the other is a technology that increases the gate withstand voltage to 300V. Hitachi said that the use of these two technologies of products will begin shipping in 2011.