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太赫兹(THz)光子晶体的研究在近些年得到快速发展,对其传输性质和相关功能器件的研究都有广泛报道,但现有研究很少从器件微加工和实验要求出发讨论器件的结构设计问题.通过数值模拟,明确了THz波段光子晶体基本几何参数的尺寸范围,重点分析了器件高度和传播方向上周期性单元个数对THz波传输性能的影响.研究结果表明,光子晶体的通带透过率随着光子晶体柱或孔高度增加而显著增加,保证柱或孔高度大于入射光波长是THz光子晶体加工中的一个重要要求;光子晶体沿传播方向行数越多,光子禁带内的透过率就越低,消光比越高,通带边沿就越陡峭,但通带的透过率会随着器件长度增加而下降,设计器件时需要折中考虑这两个因素的相互制约关系,确定最佳器件尺寸.研究结果为THz光子晶体的器件结构设计和微加工工艺设计提供理论指导.
The research on THz photonic crystals has been rapidly developed in recent years. The research on its transmission properties and related functional devices has been widely reported. However, the existing research rarely discusses the structure of devices based on micro-fabrication and experimental requirements Design problem.The numerical range of the THz waveband photonic crystal basic geometric parameters is clarified by numerical simulation.The influence of the device height and the number of periodic units in the propagation direction on the transmission performance of THz wave is investigated.The results show that the photonic crystal With the photonic crystal column or hole height increases significantly increased to ensure that the column or hole height is greater than the wavelength of incident light THz photonic crystal processing is an important requirement; photonic crystal along the propagation direction of the line more, the photon band gap The lower the transmittance, the higher the extinction ratio, the steeper the pass band edge, but the pass-band transmittance decreases with the increase of the device length. The design of the device needs to compromise between the two factors And determine the optimal device size.The research results provide theoretical guidance for the device structure design and micro-fabrication process design of THz photonic crystal.