论文部分内容阅读
Electrostatic discharge(ESD) failure has become an emerging challenge for radio frequency(RF) integrated circuits(ICs),which requires high ESD-protection for circuit applications in harsh environment.This paper discusses the design and optimization of an ultra-wideband(UWB) correlator circuit using ESDaware simulation design technique.Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction.The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique.The design is based on a commercial 0.18 μm RFCMOS technology.
Electrostatic discharge (ESD) failure has become an emerging challenge for radio frequency (RF) integrated circuits (ICs), which requires high ESD-protection for circuit applications in harsh environment. This paper discusses the design and optimization of an ultra-wideband ) correlator circuit using ESDaware simulation design technique. Mixed-mode ESD simulation-design method and RF ESD characterization technique are presented for accurate ESD device design and ESD-induced parasitic effects extraction. The impact of ESD induced parasitic is carefully considered in the whole correlator design simulation by using a direct S-parameter insertion technique. The design is based on a commercial 0.18 μm RFCMOS technology.