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在EACVD金刚石膜生长过程中,衬底温度、热丝温度、热丝电流和气源流量等是其重要的工艺参数。鉴于手动控制的不精确,采用了单片机M SP 430控制热丝温度,对其他工艺参数进行了监测。介绍了计算机测控系统硬件组成和软件实现。采用模糊P ID控制后,热丝温度控制精度为2℃,生长速率达到10μm/h以上。实验结果表明,所研制的测控系统运行可靠,使用方便,初步实现了金刚石厚膜稳定优质生长。
In EACVD diamond film growth process, the substrate temperature, hot wire temperature, hot wire current and gas flow rate is its important process parameters. In view of the inaccurate manual control, the MCU M SP 430 was used to control the hot wire temperature and other process parameters were monitored. Introduced the computer control system hardware and software implementation. Fuzzy P ID control, hot wire temperature control accuracy of 2 ℃, the growth rate of 10μm / h or more. The experimental results show that the developed monitoring and control system is reliable and easy to use, and has initially realized the stable growth of diamond thick film.