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超高频大功率晶体管是半导体器件的重要发展方向之一,它在微波通信、卫星、雷达、导航、电视等许多领域都有极重要的用途。它的主要电参数有频率特性(f_T、K_P、P_0)和功率特性。除了在总体设计和工艺措施中来保证这些电参数外,关键就是光刻版了。下面就以400兆赫10～50瓦系列硅n-p-n平面型晶体管为实例,讨论超高频大功率晶体管的光刻版图结构、总体设计及具体的设计顺序。我们设计和制出的版还未经生产实践考验,肯定会存在不少问题,仅供参考。
UHF high-power transistors are one of the important development directions of semiconductor devices. They have extremely important applications in many fields such as microwave communication, satellite, radar, navigation and television. Its main electrical parameters have frequency characteristics (f_T, K_P, P_0) and power characteristics. In addition to the overall design and process measures to ensure that these electrical parameters, the key is lithography. Here to 400 MHz 10 ~ 50W series of silicon n-p-n planar transistor as an example to discuss the lithography layout of UHF transistors, the overall design and the specific design sequence. The version we designed and made has not yet been tested by production practices and there are certainly many problems for reference purposes only.