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采用溶胶-凝胶法在(100)Si单晶上预先制备出掺钾(K)的铌酸锶钡(SBN)缓冲层,利用射频磁控溅射法在缓冲层KSBN上沉积出高择优取向的铌酸锶钡薄膜,获得了磁控溅射法制备择优取向铌酸锶钡薄膜的相关工艺参数,研究发现,KSBN缓冲层能够很有效地克服衬底与SBN薄膜之间较大的晶格失配,在氧气氩气的比例为1∶2,工作气压为1·0Pa,溅射功率300W,衬底温度300℃,退火温度为800℃的工艺条件下,能够获得c轴高度择优取向的铌酸锶钡铁电薄膜.利用X射线衍射仪,原子力显微镜等仪器分析了薄膜的微结构.通过研究SBN薄膜的电流-电压特性(I-V曲线),发现了类似于半导体p-n结的特性,且结效应的强弱与结晶性能的好坏和是否有缓冲层KSBN相关.
A (K) barium strontium barium niobate (SBN) buffer layer was prepared on (100) Si single crystal by sol-gel method and a high preferential orientation was deposited on the buffer layer KSBN by RF magnetron sputtering Of strontium barium niobate films obtained by magnetron sputtering preferred strontium barium niobate films prepared by the relevant process parameters found that the KSBN buffer layer can be effectively overcome the substrate and SBN thin film between the larger lattice Under the conditions of oxygen-argon gas ratio of 1: 2, working pressure of 1.0 Pa, sputtering power of 300 W, substrate temperature of 300 ℃ and annealing temperature of 800 ℃, a highly preferred c-axis oriented Strontium barium niobate ferroelectric thin films were fabricated by the same method.The microstructures of the thin films were analyzed by X-ray diffractometry and atomic force microscopy.The properties of semiconductor pn junctions were found by studying the current-voltage characteristics (IV curves) of SBN thin films The effect of the junction effect and the crystallization performance is good and whether the buffer layer KSBN related.