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本文报道 MOCVD 生长 GaAs/Al_xGa_(1-x)As 量子异质结构材料(超晶格、量子阱及量子共振隧穿二极管),采用横断面透射显微术表征了样品的界面结构。实验表明:多量子阱与超晶格的周期性良好,层与层之间界面清晰,采用[100]带轴入射,观察到超晶格的 TEM 卫星衍射斑,测量到量子阱中电子的子能级跃迁吸收。研究了生长工艺和材料结构的关系,分析了影响 RT 器件的因素。
This paper reports the growth of GaAs / Al_xGa_ (1-x) As quantum heterostructure materials (superlattice, quantum well and quantum tunneling diode) by MOCVD. The interfacial structure of the samples was characterized by cross-sectional transmission microscopy. The experimental results show that the multiple quantum well and the superlattice have good periodicity, and the interface between the layers is clear. When the [100] incident axis is used, the superlattice TEM diffraction spot is observed and the electron sub-quantum of the quantum well Energy level jump absorption. The relationship between the growth process and the structure of the material was studied, and the factors affecting the RT device were analyzed.