论文部分内容阅读
本文报导一种采用双室矩形反应管生长p~+-n_1-n_2-n~(?)多层汽相外延技术.Zn和Sn分别为P型和N型掺杂剂.本技术能避免杂质存贮效应,使多层外延的浓度分布陡峭,p~+层中Zn对n_1层施主补偿小,n_1浓度下降一个数量级时n_1-n_2之间的过渡区为0.05～0.l微米,n_2-n~(?)之间的过渡区约0.5微米.本工作还研究了不同衬托倾斜角α和反应气流速度对外廷层横向均匀性的影响.实验证明,当α=22°时,运用局部气流加速法使外延层横向均匀性得到了明显改善.对于面积为4.5平方厘米的多层材料,5～7微米厚的n_2层,其横向厚度的最大偏差为±4.6%;亚微米厚的n_1层,其横向厚度是最大偏差为±17%;n_1层横向浓度的最大偏差为±5.1%.实验证明,用本技术生长的p~+-n_1-n_2-n~(?)多层材料,在保证有较高的输出效率的前提下,提高了器件的可靠性.材料性能优于传统的液相外延技术.制备IMPATT器件的典型结果为:在8千兆赫下最高的连续波输出功率达2.93瓦,效率20.5%、与Pt H-L结构的器件相比.工作寿命显然较长.文中还对Zn的掺杂行为进行了初步的讨论.
This paper reports a multi-layer vapor-phase epitaxial growth technique using a double chamber rectangular tube for growth of p ~ + -n_1-n_2-n ~ (?) .Zn and Sn are P-type and N-type dopants, respectively. Storage effect, so that the multi-layer epitaxial concentration distribution steep, p ~ + layer Zn donor compensation n_1 small, n_1 concentration decreased an order of magnitude n_1-n_2 transition between 0.05 ~ 0.l micron, n_2- n ~ (?) of the transition between about 0.5 microns.This work also studied the different bearing tilt angle α and the reaction gas flow velocity on the lateral uniformity of the outer layer of the experimental results show that when α = 22 °, the use of local air flow The lateral uniformity of the epitaxial layer has been greatly improved by the acceleration method.The maximum deviation of the lateral thickness of n_2 layer with 5 ~ 7μm thickness is ± 4.6% for multi-layer material with an area of 4.5cm 2, , The maximum deviation of horizontal thickness is ± 17% and the maximum deviation of lateral concentration of n_1 layer is ± 5.1% .Experiments show that the p ~ + -n_1-n_2-n ~ (~ To ensure a higher output efficiency, improve the reliability of the device.Material properties superior to the traditional liquid-phase epitaxy technology.Preliminary preparation of IMPATT device results as follows: 8 GHz the maximum CW output power of 2.93 watts, efficiency of 20.5%, compared to the device Pt H-L configuration. Obviously longer working life. The article also acts Zn-doped a preliminary discussion.