本文报道ＩｎＡｓ／ＧａＡｓ自组织生长量子点结构中发光的温度特性．在１２～１５０Ｋ温度范围内，实验测得的ＩｎＡｓ激子发光能量随温度增加明显红移，其红移速率远大于ＩｎＡｓ带隙的温度关系，而光谱宽度则明显减小．这些结果表明ＩｎＡｓ量子点结构是一种强耦合系统，局域在ＩｎＡｓ量子点中的载流子波函数会相互交途、相互贯穿，从而增强了载流子的弛豫过程． This paper reports the temperature characteristics of luminescence in the InAs / GaAs self-organized quantum dots. In the temperature range of 12 ~ 150K, the luminescence energy of the InAs excitons evidently red-shifted with increasing temperature, the red shift rate is much larger than that of the InAs band gap, and the spectral width is obviously reduced. These results show that the InAs quantum dot structure is a strongly coupled system. The local carrier wave functions in the InAs quantum dots cross each other and penetrate each other, thus enhancing the relaxation process of carriers.