对于硅片的表面沾污,一般可用X射线荧光、固体质谱仪或离子探针等方法检测,但这些都是大型、昂贵的仪器,一般工厂不可能配置,由此提出了用紫外荧光分光光度计作为硅片表面杂质沾污的检测手段(Fe、Cu、Ni等)。我们对此进行了大量的实验,但所得数据不能支持这种方法,用一定波长的激发光照射不同的固体表面(硅片、铁片和铝片等),都会得到同样的光谱图(EM图),完全缺乏特征性。峰的强度也与样品的成份无关,而只与样品的状态相关。因此,用这种方法检测硅表面的沾污,是缺乏根据的,在理论上也不能成立。因为只有在原子化的气态情况下才能激发出原子荧光,在常温下对绝大多数元素来说(除汞之外),是不能激发出原子荧光的。紫外荧光分光光度计的分析对象主要是某些有机物的分子荧光,如果测定无机离子的话,也一定要借助某些具有荧光的有机物形成荧光 Surface contamination of silicon wafers can be detected by X-ray fluorescence, solid-state mass spectrometry or ionization probes, but these are large, expensive instruments that can not be configured in a typical factory. Thus, the use of UV fluorescence spectrophotometry As the silicon surface contamination detection means (Fe, Cu, Ni, etc.). We have done a lot of experiments on this, but the data do not support this method. The same spectrum is obtained by irradiating different solid surfaces (silicon, iron and aluminum) with a certain wavelength of excitation light (EM map ), Completely lacking in character. The intensity of the peak is also independent of the composition of the sample and only depends on the state of the sample. Therefore, using this method to detect the contamination of the silicon surface is unfounded, in theory, can not be established. Because atomic fluorescence is excited only in an atomized gaseous state, atomic fluorescence can not be excited at most elements (except mercury) at normal temperatures. UV fluorescence spectrophotometer analysis of the main object is the molecular fluorescence of some organic matter, if the determination of inorganic ions, it must also rely on some fluorescent organic matter to form fluorescence