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本文总结了CG36晶体管加电功率的恒定应力加速寿命试验结果。阐述了开展加速寿命试验的必要性,半导体器件加速寿命试验的基本原理,本试验的目的和试验方案的考虑。通过试验证实了器件的寿命分布服从对数正态分布,外推了器件在使用状态下的寿命和失效率水平;提出了对于加电功率的加速试验不应简单地运用经典的阿列尼乌斯方程,对某些器件尤其是微波器件必须考虑电压和电流的因子对失效的影响,对加速方程进行必要的修正。本试验共投入了1000只样品,其结果可作为整机可靠性设计的依据。
This article summarizes the results of a constant stress accelerated life test of a CG36 transistor with power applied. The necessity of carrying out accelerated life test, the basic principle of accelerated life test of semiconductor device, the purpose of this test and the consideration of test plan are expounded. Through the experiment, it is confirmed that the life distribution of the device obeys the logarithm normal distribution and extrapolates the lifetime and failure rate of the device under the condition of use. It is proposed that the acceleration test of the power application should not simply use the classical Arrhenius Equation, for some devices, especially microwave devices must consider the voltage and current factors on the failure of the impact of the acceleration equation necessary amendments. A total of 1000 samples were put into the experiment, the result can be used as the basis for the reliability design of the whole machine.