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本文系统地研究了密集线条和孤立线条间CD(关键尺寸)刻蚀偏差参数对金属硬掩膜(MHM)刻蚀工艺的影响,涉及的范围有化学气体、源功率、压力、偏差功率以及ESC温度。特别是,如果正确地应用基于CH4的等离子固化光刻胶掩膜,发现它具有控制密集和ISO CD负载的特殊能力,且同时保持准确的密集CD。而且,在基于Cl2和基于HBr的BARC打开步骤之间,还看到刻蚀化学气体对CD负载的有重大影响。此外,也发现M-HM的应力和刻蚀后剖面影响CD负载性能。根据这些发现,成功地展示了改善钨触点和铜沟槽之间电气互连的解决方法。
In this paper, we systematically studied the influence of CD (critical dimension) etch bias between dense lines and isolated lines on MHM etching process, including chemical gas, source power, pressure, deviation power and ESC temperature. In particular, if the CH4-based plasma cured resist mask is correctly applied, it has been found to have the special ability to control dense and ISO CD loads while maintaining an accurate dense CD. Moreover, between the Cl2-based and HBr-based BARC opening steps, it is also seen that the etch chemistry has a significant effect on the CD loading. In addition, the stress and post-etch profile of M-HM were also found to affect CD load performance. Based on these findings, successful solutions to improve the electrical interconnection between tungsten contacts and copper trenches have been demonstrated.