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以Ar+SiH_4作为反应气体,采用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)方法制备微晶硅薄膜,研究了基片温度对薄膜微观结构、吸收系数、光学禁带宽度的影响。结果表明,随着基片温度的升高,薄膜的微观组织逐渐由非晶转化为微晶,薄膜的粗糙度单调增大,而H含量则单调减小。薄膜的光学吸收系数随基片温度的升高而增大,禁带宽度由1.89 eV降低到1.75 eV。
The microcrystalline silicon thin films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) method with Ar + SiH 4 as reaction gas. The effects of substrate temperature on the microstructure, absorption coefficient and optical band gap were studied. The results show that with the increase of substrate temperature, the microstructure of the film gradually changes from amorphous to microcrystalline, the roughness of the film increases monotonically, and the content of H monotonically decreases. The optical absorption coefficient of the film increases with the increase of substrate temperature, and the band gap decreases from 1.89 eV to 1.75 eV.