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利用热丝化学气相沉积(HFCVD)方法在Si衬底上生长了4μm厚的金刚石膜,然后利用射频磁控溅射方法在金刚石膜上沉积了100 nm厚的六角氮化硼(h-BN)薄膜.在超高真空系统中测试了覆盖氮化硼(BN)薄膜前后金刚石膜的场发射特性,结果表明覆盖BN薄膜后的金刚石膜的场发射特性明显提高,开启电场由14 V/μm上升到8 V/μm.F-N曲线表明,覆盖BN薄膜后的金刚石膜在强电场区域的场增强因子有所降低,这可能归因于场发射点随着电场的增强而改变.
A 4μm thick diamond film was grown on a Si substrate by hot filament chemical vapor deposition (HFCVD). Then a 100 nm thick hexagonal boron nitride (h-BN) film was deposited on the diamond film by RF magnetron sputtering. The field emission characteristics of the diamond films before and after covering the boron nitride (BN) thin films were tested in an ultra-high vacuum system. The results show that the field emission characteristics of the diamond films covered with the BN films are obviously improved. The on- To 8 V / μm. The FN curve shows that the field enhancement factor of the diamond film covered with BN thin film in the strong electric field decreases, which may be attributed to the change of the field emission point with the increase of the electric field.