在常规混合模式晶体管的基础上提出一种新结构的器件—— Si- Ge异质结基区混合模式晶体管。由于基区采用禁带宽度较窄的 Si- Ge合金材料 ,引起空穴向发射区反注入势垒的提高 ,使 IB空穴电流减小 ,从而提高了注入效率 ;迁移率增高 ,从而提高特征频率。因而这种器件具有 β高、基区电阻低、基区渡越时间短等优点。通过器件模拟证实了该器件具有输出电流大、低温放大倍数极高、常温放大倍数较高、特征频率高等优点 ,是下一代 IC的发展方向 Based on conventional mixed-mode transistors, a new structure of SiGe heterojunction base-area hybrid mode transistor is proposed. The use of Si-Ge alloy with a narrower band gap in the base region results in an increase of the back-injection barrier of the holes to the emitter region and the decrease of the IB hole current, thereby increasing the implantation efficiency, increasing the mobility and improving the features frequency. Therefore, this device has a high β, the base resistance is low, the base transit time is short and so on. The device simulation shows that the device has the advantages of large output current, very high low temperature magnification, high magnification at room temperature and high characteristic frequency, which is the development trend of next generation IC