【摘 要】
：
In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase modulator. Here, an in
【机 构】
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KeyLaboratoryofOptoelectronicInformationandSensingTechnologiesofGuangdongHigherEducationInstitutes,D
【出 处】
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PhotonicsResearch
论文部分内容阅读
In graphene-based optoelectronic devices, the ultraweak interaction between a light and monolayer graphene leads to low optical absorption and low responsivity for the photodetectors and relative high half-wave voltage for the phase modulator. Here, an integration of the monolayer graphene onto the side-polished optical fiber is demonstrated, which is capable of providing a cost-effective strategy to enhance the light–graphene interaction, allowing us to obtain a highly efficient optical absorption in graphene and achieve multifunctions: photodetection and optical phase modulation. As a photodetector, the device has ultrahigh responsivity () and high external quantum efficiency (
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