用卤素钨灯作辐射热源，对超薄SiO2进行快速热氮化（RTN）制备了SiOxNy膜．研究了不同RTN条件下制备的SiOxNy样品的AES测量的氮纵向分布．研究结果表明，在较低的温度下（＜900℃）氯化速率是缓慢的，而在界面处因应变键容易被打破，速率稍快可形成氮峰．当温度高于900℃时，氮化速率加剧，分别形成表面和界面两个氮峰．基于研究分析的结果，意图提出一种描述快速热氮化超薄SiO2的微观机理． A halogenated tungsten lamp was used as a radiant heat source to fabricate a SiOxNy film by rapid thermal nitridation (RTN) of ultra-thin SiO2. The longitudinal distribution of nitrogen measured by AES for SiOxNy samples prepared at different RTN conditions was investigated. The results show that the chlorination rate is slow at lower temperatures (<900 ° C) and is easily broken at the interface due to the strained bond, with a slightly faster rate of nitrogen formation. When the temperature is higher than 900 ℃, the nitriding rate is increased, forming two nitrogen peaks at the surface and the interface respectively. Based on the results of the research and analysis, it is intended to propose a micro-mechanism for describing ultra-thin SiO2 with rapid thermal nitridation.