Growth and physical characterization of high resistivity Fe∶ β-Ga2O3 crystals

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High quality 0.02 mol%,0.05 mol%,and 0.08 mol% Fe∶ β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe∶ β-Ga2O3 single crystals showed transmittance of higher than 80% in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol% Fe∶β-Ga2O3 crystal reached to 3.63× 1011 Ω·cm.The high resistivity Fe∶ β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors (FETs).
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