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利用自组织生长ＩｎＡｓ／ＧａＡｓ量子点的垂直相关排列机制，生长了上下两层用６５ｎｍＧａＡｓ间隔的ＩｎＡｓ结构．下层ＩｎＡｓ已经成岛，由于应力传递效应，上层ＩｎＡｓ由二维生长向三维成岛生长的转变提前发生，临界厚度从１７ＭＬ变成小于１５ＭＬ．透射电子显微镜截面象显示形成上下两层高度差别很大的ＩｎＡｓ量子点，但是由于两层量子点之间存在强烈的电子耦合，光致发光谱中只有与包含大量子点的ＩｎＡｓ层相对应的一个发光峰．
The InAs structure with 6 5 nm GaAs spacing is grown on the upper and lower layers by utilizing the vertical correlation arrangement of self-organized InAs / GaAs quantum dots. The lower InAs has become island, due to the stress transfer effect, the upper InAs from the two-dimensional growth to the three-dimensional island growth occurred ahead of the transition, the critical thickness from 1 7ML to less than 1 5ML. Transmission electron microscopy cross-sectional images showed the formation of two layers of highly varying InAs quantum dots, but due to the strong electronic coupling between the two layers of quantum dots, only the InAs layer containing a large number of sub-dots corresponds to the photoluminescence A luminous peak.