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实验比较公用一个受光PN结结构的普通光敏三极管与间接耦合光敏三极管的光-暗电流比。结果表明间接耦合光敏三极管的光-暗电流比大于普通光敏三极管约两个数量级,显示出了注入光敏器件的优越性。
The experiment compares the light-dark current ratio of a common phototransistor and an indirectly coupled phototransistor with a common PN junction structure. The results show that the light - dark current ratio of the indirectly coupled phototransistor is about two orders of magnitude larger than that of the conventional phototransistor, indicating the superiority of the photo - sensing device.