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建立了一种高温高压下氧逸度就位控制的新方法.该方法中,使用了由参考缓冲剂、上部氧离子导体(YSZ)圆片、样品、下部YSZ圆片及氧库按序叠合成的圆柱状样品组合.通过在样品与氧库间施加一驱动电压,氧库中氧可被抽出注入样品或样品中氧可被抽出注入氧库,从而样品中氧逸度可独立于温度、压力得到任意甚至连续(若样品本身属性允许)的就位控制.通过测量样品与参考缓冲剂问电压,可对控制过程中样品中氧逸度及其变化实行就位监测.对控制过程中氧传输电流-时间关系的测量和分析,可为氧传输过程及样品内氧化或还原反应动力学研究提供新的途径. 以Ni-O体系为样品的试验表明,该方法初步获得成功.虽然目前仅在干样品体系中实现,经相应的改进,该法可望用于湿样品体系的氧逸度控制.
A new method for controlling the fugacity of oxygen fugacity under high temperature and high pressure was established in this paper. In this method, a reference buffer, upper oxygen ion conductor (YSZ) wafer, sample, lower YSZ wafer, Synthetic Cylindrical Sample Combination By applying a drive voltage between the sample and the oxygen reservoir, the oxygen in the oxygen reservoir can be drawn into the sample or the sample can be evacuated to inject oxygen into the oxygen reservoir, so that the oxygen fugacity in the sample can be independent of temperature, The pressure is controlled arbitrarily or continuously (if the property of the sample itself allows) to be controlled in place by measuring the voltage of the sample and the reference buffer to monitor the oxygen fugacity and its variation in the sample during the control, The measurement and analysis of the current-time relationship can provide a new way to study the oxygen transport process and the kinetics of oxidation or reduction reaction in the sample. The experiment with Ni-O system shows that this method has achieved initial success. In the dry sample system to achieve, the corresponding improvement, the method is expected to be used for wet sample oxygen fugacity control system.