本文介绍了一台适用于离子注入机的Freeman型离子源,该源结构简单、操作方便、功耗低、造价便宜。通过对离子源放电室结构、引出系统的改进,可获得接近旁轴条件、品质优良的离子束,束流在0.5—1mA之间。用常规的双缝法对束流发射度进行测量,能量归一化发射度在2—4×10~(-5)mm·rad·MeV~(1/2)之间,归一化亮度≥7.6×10~(10)A/m~2·rad~2,有一定的应用价值。 This article introduces a Freeman ion source suitable for ion implanter. The structure of the source is simple, easy to operate, low power consumption and low cost. Through the ion source discharge chamber structure, the introduction of the system improvements can be obtained near the paraxial conditions, high quality ion beam, beam current between 0.5-1mA. The beam emission was measured by the conventional double slit method. The normalized energy emissivity was between 2-4 × 10 -5 mm · rad · MeV 1/2 and the normalized brightness ≥ 7.6 × 10 ~ (10) A / m ~ 2 · rad ~ 2, which has a certain application value.