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在退火处理时，Ｇｅ 易与Ｓｉ 中Ｏ 形成易挥发的ＧｅＯ 复合体，使硅片表面洁净区的形成受氧的外扩散和ＧｅＯ 挥发两种因素制约。即从效果上看，Ｇｅ 增强了氧的外扩散，有利于内吸除工艺的实现
During annealing, Ge tends to form a volatile GeO complex with O in Si. The formation of a clean area on the surface of the Si wafer is restricted by the external diffusion of oxygen and the volatilization of GeO. That is from the effect point of view, Ge enhanced oxygen diffusion is conducive to the internal absorption process