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用射频溅射法将立方氮化硼（C-BN）薄膜沉积在p型Si（100）衬底上,薄膜的成分由傅里叶变换红外吸收谱和X射线衍射谱标识.在其他条件不变的情况下,研究了工作气压对制备立方氮化硼薄膜的影响.研究结果表明,工作气压是影响c-BN薄膜生长的重要参数,要得到一定立方相体积分数的氮化硼薄膜,必须要有合适的工作气压.工作气压等于或高于2.00Pa时,立方相不能形成;工作气压为 0.67Pa时,得到了立方相体积分数为92％的立方氮化硼薄膜.
A cubic boron nitride (C-BN) thin film was deposited on a p-type Si (100) substrate by radio frequency sputtering and its composition was identified by Fourier transform infrared spectroscopy and X-ray diffraction. In other conditions The effect of working pressure on the fabrication of cubic boron nitride thin films has been studied.The results show that the working pressure is an important parameter that affects the growth of c-BN thin films. To obtain a certain volume fraction of cubic boron nitride thin films, It is necessary to have a suitable working pressure. When the operating pressure is equal to or higher than 2.00 Pa, the cubic phase can not be formed. When the working pressure is 0.67 Pa, cubic boron nitride film with a volume fraction of cubic phase of 92% is obtained.