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在蓝宝石衬底上用MOCVD生长的材料制备了背入射Al0.42Ga0.58N/Al0.5Ga0.5NP-I-N型64元线列焦平面太阳光盲紫外探测器。测试了器件的光谱响应,其截止波长为285nm,在275nm峰值波长处的零偏电流响应率为20mA/W。测试了线列器件各元在5V反偏压下的暗电流,结果表明暗电流大约在10-8A数量级,暗电流分布均匀。线列器件各元的紫外光响应均匀性较好。
A back-incident Al0.42Ga0.58N / Al0.5Ga0.5NP-I-N 64-element line-array focal plane sunlight-blind UV detector was fabricated on a sapphire substrate by MOCVD. The spectral response of the device was tested with a cut-off wavelength of 285 nm and a zero-bias current response at a peak wavelength of 275 nm of 20 mA / W. The dark current of each element of a linear array device under 5V reverse bias was tested. The results show that the dark current is on the order of 10-8A and the dark current is evenly distributed. The uniformity of the ultraviolet light response of each element of the line array device is better.