论文部分内容阅读
由测量Al_(0.12)Ga_(0.88)As-Al_(0.47)Ca_(0.53)As双异质结构的量子效率,确定有源区及其界面的有效非辐射载流子寿命。由有效非辐射载流子寿命对有源层厚度的关系,获得界面复合速度s的数值。液相外延生长的特殊样品,在300K,s是1050cm/s;在110K和360K之间,激活能E_a为27meV时,界面复合速度与exp(-E_a/kT)成比例。通常k不变,作为理论预言,取辐射系数B与T~(-1.5)成比例。通过实验测量少数载流子寿命与温度的关系,决定B的特性。
The effective non-radiative carrier lifetime at the active region and its interface was determined by measuring the quantum efficiency of the Al 0.12 Ga 0.88 As-Al 0.47 Ca 0.53 As heterostructure. The value of the interface recombination velocity s is obtained from the relationship between the active non-radiative carrier lifetime and the active layer thickness. In the special sample grown by liquid phase epitaxy, s is 1050cm / s at 300K and between 110K and 360K, and the activation energy Ea is 27meV, the interface recombination velocity is proportional to exp (-E_a / kT). Usually k constant, as a theoretical prediction, take the radiation coefficient B and T ~ (-1.5) is proportional to. By experimentally measuring the relationship between minority carrier lifetime and temperature, the characteristics of B are determined.