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研制了一种新型的 80 0 nm布拉格反射镜型半导体可饱和吸收镜 ,其吸收区是低温方法和表面态方法相结合 .用该吸收体实现了氩离子激光器泵浦的掺钛蓝宝石激光器被动锁模 ,脉冲宽度达到 4 0 fs,光谱带宽为 5 6 nm,后者意味着它可以支持 2 0 fs的锁模 .脉冲序列的重复率为 97.5 MHz,泵浦源为 4 .4 5 W下平均输出功率为 30 0 m W.
A novel 80 0 nm Bragg reflector type semiconductor saturable absorption mirror was developed, whose absorption region was a combination of low temperature method and surface state method. The absorber was used to realize passive passivation of a Ti: Sapphire laser pumped by argon ion laser Mode with a pulse width of 40 fs and a spectral bandwidth of 56 nm, the latter meaning that it can support mode-locked at 20 fs. The repetition rate of the pulse train is 97.5 MHz and the pump source is averaged at 4.55 W The output power is 30 0 mW.